Manufacturer Part Number
SI2301CDS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
P-Channel Trench MOSFET
Product Features and Performance
20V Drain-Source Voltage
1A Continuous Drain Current at 25°C
112mΩ Max On-Resistance at 2.8A, 4.5V
405pF Max Input Capacitance at 10V
860mW Max Power Dissipation at Ta, 1.6W at Tc
-55°C to 150°C Operating Temperature Range
Product Advantages
Low On-Resistance for Improved Efficiency
Fast Switching Speed
High Reliability Trench MOSFET Technology
Key Technical Parameters
Vds: 20V
Vgs(Max): ±8V
Rds(on)(Max): 112mΩ @ 2.8A, 4.5V
Id(Max): 3.1A @ 25°C
Ciss(Max): 405pF @ 10V
Power Dissipation: 860mW (Ta), 1.6W (Tc)
Quality and Safety Features
RoHS3 Compliant
Solder Reflow Compatible
Compatibility
SOT-23-3 (TO-236) Surface Mount Package
Application Areas
Power Management
Switching Circuits
Battery Charging/Protection
Motor Control
Product Lifecycle
Current product, no discontinuation or replacement planned
Key Reasons to Choose
Excellent performance and efficiency with low on-resistance
Reliable trench MOSFET technology
Wide temperature range and RoHS compliance
Versatile surface mount packaging for easy integration