SI2301BDS-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI2301BDS-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

This is a P-channel TrenchFET MOSFET transistor.

Product Features and Performance

Drain to Source Voltage (Vdss) of 20V

Vgs (Max) of ±8V

Rds On (Max) of 100mOhm @ 2.8A, 4.5V

Continuous Drain Current (Id) of 2.2A

Input Capacitance (Ciss) of 375pF @ 6V

Power Dissipation (Max) of 700mW

Vgs(th) (Max) of 950mV @ 250A

Drive Voltage (Max Rds On, Min Rds On) of 2.5V, 4.5V

Gate Charge (Qg) of 10nC @ 4.5V

Product Advantages

Low on-resistance for efficient power switching

High current handling capability

Fast switching speed

Compact surface mount package

Key Technical Parameters

P-channel MOSFET

TO-236-3 (SOT-23-3) package

Operating temperature range of -55°C to 150°C

Quality and Safety Features

RoHS3 compliant

Compatibility

Suitable for various power switching and control applications

Application Areas

Power supplies

Motor drives

Switching regulators

General-purpose amplifiers

Product Lifecycle

Currently in production

Replacements or upgrades may be available in the future

Key Reasons to Choose This Product

High performance and efficiency

Compact and space-saving package

Reliable operation across a wide temperature range

RoHS compliance for environmental responsibility