Manufacturer Part Number
SI2301BDS-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SI2301BDS-T1-GE3 is a p-channel enhancement-mode MOSFET transistor from Vishay / Siliconix.
Product Features and Performance
TrenchFET technology
Low on-resistance (Rds(on))
Fast switching speed
Low input capacitance (Ciss)
Low gate charge (Qg)
Suitable for high-frequency switching applications
Product Advantages
Efficient power conversion
Improved power density
Reduced power loss
Reliable and stable performance
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±8V
On-Resistance (Rds(on)): 100mΩ @ 2.8A, 4.5V
Continuous Drain Current (Id): 2.2A @ 25°C
Input Capacitance (Ciss): 375pF @ 6V
Power Dissipation (Pd): 700mW
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Compatibility
Compatible with various electronic circuits and power supply designs
Application Areas
Switching power supplies
Motor drives
Battery chargers
Lighting and LED drivers
Telecommunications equipment
Product Lifecycle
Currently available
No known plans for discontinuation
Replacement or upgrade options may be available from Vishay/Siliconix
Key Reasons to Choose This Product
Efficient power conversion with low on-resistance
Fast switching speed for high-frequency applications
Reliable and stable performance
Compact and space-saving surface-mount package
RoHS3 compliance for environmentally-friendly use