Manufacturer Part Number
SI2301CDS-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
The SI2301CDS-T1-E3 is a P-channel enhancement-mode MOSFET transistor from Vishay/Siliconix designed for power management and switching applications.
Product Features and Performance
20V drain-to-source voltage rating
112mΩ maximum on-resistance at 2.8A, 4.5V
1A continuous drain current at 25°C
-55°C to 150°C operating temperature range
Low gate charge of 10nC at 4.5V
Low input capacitance of 405pF at 10V
Product Advantages
Efficient power management and switching
Low power loss
Compact surface-mount package
Key Technical Parameters
Drain-to-source voltage (Vdss): 20V
Gate-to-source voltage (Vgs): ±8V
On-resistance (Rds(on)): 112mΩ max. at 2.8A, 4.5V
Drain current (Id): 3.1A continuous at 25°C
Quality and Safety Features
RoHS3 compliant
Qualified for automotive and industrial applications
Compatibility
Suitable for power management, switching, and control circuits
Application Areas
Power supplies
Motor drives
Battery chargers
LED lighting
Industrial controls
Product Lifecycle
This product is currently in production and is not nearing discontinuation.
Replacement or upgraded products are available from Vishay/Siliconix.
Key Reasons to Choose This Product
Efficient power management and switching
Low on-resistance and power loss
Compact surface-mount package
Wide operating temperature range
RoHS3 compliance for environmental safety
Automotive and industrial grade quality