Manufacturer Part Number
SI1902DL-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Products
Transistors FETs, MOSFETs Arrays
Product Features and Performance
Trench MOSFET technology
Dual N-Channel configuration
Logic level gate
Low on-resistance
Low gate charge
Product Advantages
Efficient power conversion
Improved system performance
Compact and space-saving design
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
On-resistance (Rds(on)): 385mOhm
Continuous Drain Current (Id): 660mA
Gate Threshold Voltage (Vgs(th)): 1.5V
Gate Charge (Qg): 1.2nC
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Tape & Reel (TR) packaging
6-TSSOP, SC-88, SOT-363 package options
Application Areas
Power management circuits
Switching applications
Amplifier circuits
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Efficient power handling
Compact and space-saving design
Reliable performance across a wide temperature range
Compatibility with common surface mount packaging