Manufacturer Part Number
SI1902DL-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
Trench MOSFET Technology
Dual N-Channel Configuration
Logic Level Gate
Low On-Resistance
Product Advantages
Efficient power switching performance
Compact surface mount package
Wide operating temperature range
Key Technical Parameters
Drain to Source Voltage (Vdss): 20V
On-Resistance (Rds(on)): 385mOhm
Continuous Drain Current (Id): 660mA
Gate Threshold Voltage (Vgs(th)): 1.5V
Gate Charge (Qg): 1.2nC
Quality and Safety Features
RoHS3 Compliant
Reliable trench MOSFET technology
Compatibility
Surface Mount Packaging (SC-70-6)
Tape & Reel Packaging
Application Areas
Power management circuits
Switching applications
Battery-powered devices
Product Lifecycle
Currently available
No plans for discontinuation
Key Reasons to Choose
Excellent power efficiency
Compact and space-saving design
Wide operating temperature range
Reliable trench MOSFET technology
Compliant with RoHS3 standards