SI1900DL-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI1900DL-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

The SI1900DL-T1-E3 is a dual N-channel MOSFET transistor from Vishay / Siliconix's TrenchFET series.

Product Features and Performance

30V Drain-to-Source Voltage (Vdss)

480mOhm maximum On-Resistance (Rds(on)) at 590mA Drain Current, 10V Gate-to-Source Voltage

590mA Continuous Drain Current at 25°C

3V maximum Gate-to-Source Threshold Voltage (Vgs(th)) at 250μA Drain Current

4nC maximum Gate Charge (Qg) at 10V Gate-to-Source Voltage

270mW Power Dissipation

Product Advantages

Efficient power management due to low on-resistance

Suitable for logic-level gate drive

Compact 6-pin SC-70-6 surface mount package

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 30V

On-Resistance (Rds(on)): 480mOhm @ 590mA, 10V

Continuous Drain Current (Id): 590mA @ 25°C

Gate-to-Source Threshold Voltage (Vgs(th)): 3V @ 250μA

Gate Charge (Qg): 1.4nC @ 10V

Power Dissipation: 270mW

Quality and Safety Features

RoHS3 compliant

Operating temperature range: -55°C to 150°C

Compatibility

The SI1900DL-T1-E3 is compatible with various electronic circuits and systems that require high-performance, logic-level gate drive, dual N-channel MOSFET transistors.

Application Areas

Power management circuits

Switch-mode power supplies

Motor control

General-purpose switching applications

Product Lifecycle

The SI1900DL-T1-E3 is an active product, with no plans for discontinuation. Replacement or upgrade options may be available from Vishay / Siliconix or other MOSFET manufacturers.

Key Reasons to Choose This Product

Efficient power management due to low on-resistance

Suitable for logic-level gate drive

Compact and space-saving 6-pin SC-70-6 surface mount package

Wide operating temperature range of -55°C to 150°C

RoHS3 compliance for environmental sustainability

Availability and support from a reputable manufacturer, Vishay / Siliconix