Manufacturer Part Number
SI1903DL-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Array
Product Features and Performance
MOSFET (Metal Oxide) Technology
2 P-Channel (Dual) Configuration
Logic Level Gate FET Feature
Drain to Source Voltage (Vdss): 20V
On-Resistance (Rds On): 995mOhm @ 410mA, 4.5V
Continuous Drain Current (Id): 410mA @ 25°C
Threshold Voltage (Vgs(th)): 1.5V @ 250μA
Gate Charge (Qg): 1.8nC @ 4.5V
Product Advantages
Compact Surface Mount Package
Wide Operating Temperature Range: -55°C to 150°C
Low Power Dissipation: 270mW
Key Technical Parameters
Package: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Series: TrenchFET
Packaging: Tape & Reel (TR)
Quality and Safety Features
RoHS3 Compliant
Compatibility
No specific compatibility information provided
Application Areas
General purpose MOSFET applications
Product Lifecycle
No information provided on product lifecycle or availability of replacements/upgrades
Key Reasons to Choose This Product
Compact surface mount package
Wide operating temperature range
Low power dissipation
MOSFET technology with desirable performance characteristics (Vdss, Rds On, Id, Vgs(th), Qg)
SI1902DL-T1-E1Electro-Films (EFI) / Vishay