Manufacturer Part Number
SI1401EDH-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
ROHS3 Compliant
Surface Mount
TrenchFET Series
P-Channel MOSFET
Operating Temperature: -55°C to 150°C
Drain to Source Voltage (Vdss): 12V
Maximum Gate-Source Voltage (Vgs): ±10V
On-State Resistance (Rds(on)): 34mΩ @ 5.5A, 4.5V
Continuous Drain Current (Id): 4A @ 25°C
Power Dissipation: 1.6W (Ta), 2.8W (Tc)
Gate Charge (Qg): 36nC @ 8V
Drive Voltage: 1.5V (Max Rds(on)), 4.5V (Min Rds(on))
Threshold Voltage (Vgs(th)): 1V @ 250μA
Product Advantages
Low on-state resistance for improved efficiency
High current handling capability
Wide operating temperature range
Suitable for various power conversion and control applications
Key Technical Parameters
MOSFET Technology
P-Channel
Drain-Source Voltage (Vdss): 12V
On-State Resistance (Rds(on)): 34mΩ
Continuous Drain Current (Id): 4A
Quality and Safety Features
ROHS3 Compliant
Suitable for high-temperature operation up to 150°C
Compatibility
Standard SC-70-6 package
Surface mount technology
Application Areas
Power conversion
Motor control
Switching power supplies
Battery management systems
Industrial electronics
Product Lifecycle
Current product
No information on discontinuation or replacement available
Key Reasons to Choose
Low on-state resistance for improved efficiency
High current handling capability
Wide operating temperature range
Suitable for various power conversion and control applications
Compact, surface mount package