Manufacturer Part Number
SI1400DL-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistors, FETs, MOSFETs, Single
Product Features and Performance
N-Channel MOSFET
20V Drain-Source Voltage
±12V Gate-Source Voltage
150mΩ On-Resistance @ 1.7A, 4.5V
6A Continuous Drain Current @ 25°C
568mW Power Dissipation
600mV Gate Threshold Voltage @ 250μA
4nC Gate Charge @ 4.5V
-55°C to 150°C Operating Temperature Range
Surface Mount Package (6-TSSOP, SC-88, SOT-363)
Product Advantages
Low on-resistance for efficient power switching
Wide operating temperature range
Small, surface-mount package for space-constrained designs
Key Technical Parameters
Drain-Source Voltage (Vdss): 20V
Gate-Source Voltage (Vgs): ±12V
On-Resistance (Rds(on)): 150mΩ @ 1.7A, 4.5V
Drain Current (Id): 1.6A @ 25°C
Power Dissipation (Pd): 568mW
Gate Threshold Voltage (Vgs(th)): 600mV @ 250μA
Gate Charge (Qg): 4nC @ 4.5V
Operating Temperature Range: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Reliable and robust MOSFET technology
Compatibility
Compatible with a wide range of electronic circuits and systems
Application Areas
Power management
Switching circuits
Motor control
Industrial electronics
Product Lifecycle
Current production part
Ongoing availability and support
Key Reasons to Choose This Product
Excellent power efficiency with low on-resistance
Wide operating temperature range for demanding applications
Small, space-saving surface-mount package
Reliable and robust MOSFET technology
Suitable for a variety of power management and switching applications
SI1404DH-T1Electro-Films (EFI) / Vishay