SI1400DL-T1-E3 - Vishay Siliconix

Manufacturer Part Number

SI1400DL-T1-E3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Single

Product Features and Performance

N-Channel MOSFET

Drain to Source Voltage (Vdss): 20 V

Vgs (Max): ±12V

Rds On (Max) @ Id, Vgs: 150mOhm @ 1.7A, 4.5V

Current Continuous Drain (Id) @ 25°C: 1.6A (Ta)

Power Dissipation (Max): 568mW (Ta)

Vgs(th) (Max) @ Id: 600mV @ 250A (Min)

Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V

Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V

Product Advantages

Trench MOSFET technology

Compact surface mount package

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

FET Type: N-Channel

Mounting Type: Surface Mount

Package / Case: 6-TSSOP, SC-88, SOT-363

Supplier Device Package: SC-70-6

Series: TrenchFET

Package: Tape & Reel (TR)

Operating Temperature: -55°C ~ 150°C (TJ)

Quality and Safety Features

RoHS: ROHS3 Compliant

Compatibility

Manufacturer's packaging: SC-70-6

Base Product Number: SI1400

Application Areas

Suitable for various electronic applications requiring high efficiency power switching

Product Lifecycle

Currently available, no indication of discontinuation

Several Key Reasons to Choose This Product

Excellent performance characteristics with low on-resistance and fast switching

Compact surface mount package for efficient PCB layout

Trench MOSFET technology for high reliability and efficiency

Wide operating temperature range suitable for diverse applications