SI1317DL-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SI1317DL-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product - Transistors - FETs, MOSFETs - Single

Product Features and Performance

P-Channel MOSFET

20V Drain to Source Voltage

150mOhm Max On-Resistance @ 1.4A, 4.5V

4A Continuous Drain Current @ 25°C

272pF Max Input Capacitance @ 10V

500mW Max Power Dissipation

800mV Max Gate Threshold Voltage @ 250uA

8V Min, 4.5V Max Drive Voltage

5nC Max Gate Charge @ 4.5V

Product Advantages

High efficiency due to low on-resistance

Compact surface mount package

Wide operating temperature range of -50°C to 150°C

Key Technical Parameters

Drain to Source Voltage: 20V

Gate to Source Voltage: ±8V

On-Resistance: 150mOhm Max

Drain Current: 1.4A Continuous @ 25°C

Input Capacitance: 272pF Max @ 10V

Power Dissipation: 500mW Max

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount (SC-70, SOT-323)

Application Areas

Power management circuits

Motor control

Battery charging/discharging

General purpose switching

Product Lifecycle

Currently in production

Replacement parts and upgrades available

Key Reasons to Choose

High efficiency due to low on-resistance

Compact and space-saving surface mount package

Wide operating temperature range for diverse applications

RoHS3 compliance for environmental responsibility