Manufacturer Part Number
STW47NM60ND
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET suitable for automotive and industrial applications
Product Features and Performance
600V drain-source voltage rating
Low on-resistance of 88mΩ
High current capability of 35A continuous drain current
Low gate charge of 120nC
Suitable for high-frequency switching applications
Rugged and reliable design
Product Advantages
Excellent reliability and robustness
High power density
Optimized switching performance
Compliant with AEC-Q101 automotive standard
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 88mΩ
Continuous Drain Current (Id): 35A
Input Capacitance (Ciss): 4200pF
Power Dissipation (Ptot): 255W
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Robust package design (TO-247-3)
Compatibility
Suitable for a wide range of industrial and automotive power electronics applications
Application Areas
Motor drives
Switching power supplies
Inverters
Electric vehicles
Industrial automation equipment
Product Lifecycle
Currently in production
No known plans for discontinuation
Availability of replacement parts or upgrades
Key Reasons to Choose This Product
High power density and efficiency
Excellent reliability and ruggedness
Optimal switching performance for high-frequency applications
Compliance with automotive industry standards
Broad application suitability
STW45NM50FD/STSamsung Semiconductor