Manufacturer Part Number
STW48N60M2-4
Manufacturer
STMicroelectronics
Introduction
High-performance MOSFET transistor for power electronics and motor drive applications
Product Features and Performance
600V drain-source voltage
Low on-resistance of 70mΩ
High continuous drain current of 42A (at 25°C)
High power dissipation capability of 300W
Fast switching and low gate charge of 70nC
Product Advantages
Efficient power conversion
Reliable and robust design
Suitable for high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 70mΩ
Continuous Drain Current (Id): 42A
Input Capacitance (Ciss): 3060pF
Power Dissipation (Ptot): 300W
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and safety
Compatibility
Through-hole mounting in TO-247-4 package
Compatible with various power electronic and motor drive applications
Application Areas
Power supplies
Motor drives
Inverters
Converters
Industrial automation
Product Lifecycle
Currently available
No discontinuation or upgrade plans known
Key Reasons to Choose This Product
Excellent power handling and efficiency
Reliable and robust performance
Suitable for high-power applications
Cost-effective solution for power electronics
STW4N150 MOSSTMicroelectronics