Manufacturer Part Number
STW48N60DM2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with industry-leading on-resistance and advanced trench technology in TO-247 package.
Product Features and Performance
600V MOSFET with low on-resistance of 79mΩ
High continuous drain current of 40A at 25°C
Ultra-low input capacitance of 3250pF
Wide operating temperature range of -55°C to 150°C
High power dissipation capability of 300W
Product Advantages
Excellent efficiency and power density
Optimized for high-frequency and high-power applications
Robust and reliable performance
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 79mΩ @ 20A, 10V
Continuous Drain Current (Id): 40A @ 25°C
Input Capacitance (Ciss): 3250pF @ 100V
Power Dissipation (Pd): 300W @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with various high-power, high-frequency applications
Application Areas
Switching power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is currently available and not nearing discontinuation.
Replacement or upgrade options may be available from STMicroelectronics.
Key Reasons to Choose This Product
Industry-leading performance with low on-resistance and high current capability
Excellent efficiency and power density for high-frequency, high-power applications
Robust and reliable design for demanding industrial and consumer applications
Wide operating temperature range and high power dissipation capability
RoHS3 compliance for environmental sustainability