Manufacturer Part Number
STW45NM50FD
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss): 500V
Vgs (Max): ±30V
RDS(on) (Max) @ 22.5A, 10V: 100mΩ
Continuous Drain Current (ID) @ 25°C: 45A
Input Capacitance (Ciss) (Max) @ 25V: 3600pF
Power Dissipation (Max) @ Tc: 417W
Gate Charge (Qg) (Max) @ 10V: 120nC
Operating Temperature: -65°C to 150°C
Product Advantages
High voltage rating
Low on-state resistance
High current capability
Compact TO-247-3 package
Key Technical Parameters
MOSFET Technology
N-Channel
Vgs(th) (Max) @ 250A: 5V
Drive Voltage (Max RDS(on), Min RDS(on)): 10V
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with TO-247-3 package
Application Areas
Power supplies
Motor drives
Inverters
Industrial and automotive electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacement/upgrade options available
Key Reasons to Choose
High voltage and current ratings
Low on-state resistance for high efficiency
Compact and reliable TO-247-3 package
Suitable for a wide range of power electronics applications