Manufacturer Part Number
STW45N65M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MDmesh V power MOSFET
Product Features and Performance
650V breakdown voltage
Very low on-resistance: 78 mΩ
Low gate charge: 91 nC
High current capability: 35A continuous drain current
High power handling: 210W
Product Advantages
Superior efficiency in power conversion applications
Reduced switching losses
Compact design enabled by high power density
Key Technical Parameters
Drain-source voltage (Vdss): 650V
Gate-source voltage (Vgs): ±20V
Continuous drain current (Id): 35A
On-resistance (Rds(on)): 78 mΩ
Input capacitance (Ciss): 3375 pF
Quality and Safety Features
ROHS3 compliant
TO-247-3 package for reliable operation
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
This product is actively supported by the manufacturer
Upgrades and replacements may be available in the future
Key Reasons to Choose
Excellent efficiency and power density
Robust and reliable performance
Broad compatibility and suitability for various applications
Supported by a reputable manufacturer