Manufacturer Part Number
STW45N60DM6
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET with MDmesh DM6 technology for industrial and consumer applications.
Product Features and Performance
High voltage rating of 600V
Low on-resistance of 99mΩ @ 15A, 10V
High continuous drain current of 30A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1920pF @ 100V
Maximum power dissipation of 210W at 25°C
Product Advantages
Excellent switching performance
High efficiency due to low on-resistance
Reliable and robust design
Suitable for a wide range of applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 99mΩ @ 15A, 10V
Continuous Drain Current (Id): 30A @ 25°C
Input Capacitance (Ciss): 1920pF @ 100V
Power Dissipation (Ptot): 210W @ 25°C
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and consumer applications
Reliable and robust design for long-term use
Compatibility
Suitable for a wide range of industrial and consumer applications that require high-voltage, high-current MOSFETs
Application Areas
Industrial power supplies
Motor drives
Inverters
Switching power supplies
Consumer electronics
Product Lifecycle
Currently available and in production
No immediate plans for discontinuation
Replacement or upgrade options may be available in the future
Key Reasons to Choose This Product
Excellent switching performance and efficiency due to low on-resistance
Wide operating temperature range and high power dissipation capability
Reliable and robust design for long-term use
Suitable for a wide range of industrial and consumer applications