Manufacturer Part Number
STW43N60DM2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET with low on-resistance and fast switching characteristics
Product Features and Performance
600V drain-source voltage
93mΩ on-resistance at 10V gate-source voltage
34A continuous drain current at 25°C
2500pF input capacitance
250W power dissipation
Wide operating temperature range of -55°C to 150°C
Fast switching speed
Product Advantages
Low on-resistance for high efficiency
Fast switching for high-frequency applications
High power density
Reliable operation in harsh environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 93mΩ @ 17A, 10V
Drain Current (Id): 34A (Tc)
Input Capacitance (Ciss): 2500pF @ 100V
Power Dissipation (Ptot): 250W (Tc)
Quality and Safety Features
RoHS3 compliant
TO-247-3 package for reliable thermal management
Compatibility
Through-hole mounting
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Telecom and server power supplies
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High performance with low on-resistance and fast switching
Reliable operation in harsh environments
Efficient power conversion for high-frequency applications
Compact and thermally efficient package design
RoHS3 compliance for environmental responsibility
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