Manufacturer Part Number
STW120NF10
Manufacturer
STMicroelectronics
Introduction
High-performance N-Channel MOSFET transistor
Product Features and Performance
MOSFET (Metal Oxide) technology
100V Drain to Source Voltage (Vdss)
Maximum Vgs of ±20V
Low On-Resistance of 10.5mOhm @ 60A, 10V
High Continuous Drain Current of 110A (Tc)
Wide Operating Temperature Range of -55°C to 175°C (TJ)
High Power Dissipation of 312W (Tc)
Product Advantages
Excellent switching performance
High current handling capability
Reliable and robust design
Suitable for high-power applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds On): 10.5mOhm @ 60A, 10V
Continuous Drain Current (Id): 110A (Tc)
Input Capacitance (Ciss): 5200pF @ 25V
Power Dissipation (Pd): 312W (Tc)
Gate Charge (Qg): 233nC @ 10V
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Through-hole mounting (TO-247-3 package)
Application Areas
High-power switching applications
Motor drives
Power supplies
Industrial and automotive electronics
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Exceptional performance in high-power and high-current applications
Reliable and robust design for demanding environments
Efficient switching and low on-resistance for improved energy efficiency
Wide operating temperature range for versatile use
RoHS3 compliance for environmental responsibility