Manufacturer Part Number
STW11NK90Z
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET in the SuperMESH series for high-power, high-voltage applications.
Product Features and Performance
High drain-to-source voltage (900V)
Low on-resistance (980mΩ @ 4.6A, 10V)
High continuous drain current (9.2A @ 25°C)
Wide operating temperature range (-55°C to 150°C)
Low gate charge (115nC @ 10V)
High power dissipation (200W @ Tc)
Product Advantages
Excellent performance for high-power, high-voltage applications
Compact TO-247-3 package
Suitable for a wide range of operating conditions
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 900V
Gate-to-Source Voltage (Vgs): ±30V
Continuous Drain Current (Id): 9.2A @ 25°C
On-Resistance (Rds(on)): 980mΩ @ 4.6A, 10V
Input Capacitance (Ciss): 3000pF @ 25V
Power Dissipation (Ptot): 200W @ Tc
Quality and Safety Features
RoHS3 compliant
TO-247-3 through-hole package
Compatibility
Suitable for a wide range of high-power, high-voltage applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
This product is currently in production and available for purchase.
Replacement or upgrade options may be available in the future.
Several Key Reasons to Choose This Product
Excellent performance for high-power, high-voltage applications
Compact and reliable TO-247-3 package
Wide operating temperature range and high power dissipation
Low on-resistance and gate charge for efficient operation
RoHS3 compliance for environmental sustainability
STW10NK80Z MOSSTMicroelectronics