Manufacturer Part Number
STW11NB80
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-power N-channel MOSFET
Product Features and Performance
Supports high voltage up to 800V
Continuous drain current up to 11A at 25°C
Low on-resistance down to 800mΩ
High power dissipation up to 190W
Fast switching with low gate charge
Suitable for high-power applications
Product Advantages
Excellent voltage and current handling capability
High efficiency and low power loss
Robust design for reliable performance
Ease of use with simple gate drive requirements
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 800mΩ @ 5.5A, 10V
Continuous Drain Current (Id): 11A @ 25°C
Input Capacitance (Ciss): 2900pF @ 25V
Power Dissipation (Ptot): 190W @ Tc
Quality and Safety Features
RoHS non-compliant
TO-247-3 package for secure mounting and heat dissipation
Designed for high-reliability and rugged applications
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Welding equipment
Industrial automation and control
Product Lifecycle
This product is an established part of the PowerMESH series
Replacements or upgrades may be available in the future
Key Reasons to Choose This Product
Excellent voltage and current handling capability for high-power applications
High efficiency and low power loss for improved system performance
Robust and reliable design for long-term, continuous operation
Easy to use with simple gate drive requirements