Manufacturer Part Number
STW12N150K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, enhanced-performance MOSFET in the MDmesh K5 series
Product Features and Performance
Operating temperature range: -55°C to 150°C (TJ)
Drain-to-source voltage (Vdss): 1500V
Maximum gate-to-source voltage (Vgs): ±30V
Maximum on-resistance (Rds(on)): 1.9Ω @ 3.5A, 10V
Continuous drain current (Id): 7A @ 25°C (Tc)
Input capacitance (Ciss): 1360pF @ 100V
Maximum power dissipation: 250W @ 25°C (Tc)
N-channel MOSFET
Product Advantages
Enhanced performance with low on-resistance and high voltage rating
Suitable for high-voltage, high-power applications
Excellent thermal management with high power dissipation
Key Technical Parameters
Drain-to-source voltage (Vdss): 1500V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 1.9Ω @ 3.5A, 10V
Continuous drain current (Id): 7A @ 25°C (Tc)
Input capacitance (Ciss): 1360pF @ 100V
Power dissipation (Tc): 250W
Quality and Safety Features
Compliant with RoHS3 directive
Housed in a robust TO-247-3 package
Compatibility
Suitable for various high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Inverters
Uninterruptible power supplies (UPS)
Industrial automation and control systems
Product Lifecycle
Currently available
No information on discontinuation or replacement plans
Several Key Reasons to Choose This Product
High voltage rating (1500V) suitable for demanding high-voltage applications
Low on-resistance for efficient power conversion and reduced power losses
High power dissipation capability for reliable operation in high-power applications
Robust TO-247-3 package for durability and thermal management
Compliance with RoHS3 directive for environmental friendliness
STW12NB60STMicroelectronics