Manufacturer Part Number
STU2N95K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, N-channel power MOSFET in TO-251 (IPAK) package
Product Features and Performance
Extremely low on-resistance
High drain-source breakdown voltage
Fast switching speed
Suitable for high-frequency, high-efficiency power conversion applications
Product Advantages
Superior power density
Improved system efficiency
Reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 950 V
Vgs (Max): 30 V
Rds On (Max) @ Id, Vgs: 5 Ohm @ 1 A, 10 V
Current Continuous Drain (Id) @ 25°C: 2 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 105 pF @ 100 V
Power Dissipation (Max): 45 W (Tc)
Vgs(th) (Max) @ Id: 5 V @ 100 A
Drive Voltage (Max Rds On, Min Rds On): 10 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Quality and Safety Features
ROHS3 Compliant
Operating Temperature Range: -55°C ~ 150°C (TJ)
Compatibility
Through-hole mounting
TO-251 (IPAK) package
Application Areas
High-frequency, high-efficiency power conversion applications
Switched-mode power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
This product is an active and available device from STMicroelectronics.
Key Reasons to Choose This Product
Excellent power density and efficiency due to extremely low on-resistance
High reliability and ruggedness with high drain-source breakdown voltage
Fast switching capability for high-frequency applications
Suitable for a wide range of power conversion and motor control applications
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