Manufacturer Part Number
STU2N105K5
Manufacturer
STMicroelectronics
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
N-Channel MOSFET
Drain to Source Voltage (Vdss): 1050V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 8Ohm @ 750mA, 10V
Continuous Drain Current (Id) @ 25°C: 1.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 100 V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100A
Drive Voltage (Max Rds On, Min Rds On): 10V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Product Advantages
High Voltage Capability
Low On-Resistance
High Power Handling
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Application Areas
Suitable for a variety of power electronics applications
Product Lifecycle
This product is an active and current offering from STMicroelectronics.
Key Reasons to Choose This Product
High voltage capability up to 1050V
Low on-resistance for efficient power conversion
High power handling up to 60W
Suitable for a wide range of power electronics applications
RoHS3 compliant for use in modern electronic systems
STU302S