Manufacturer Part Number
STU2N62K3
Manufacturer
STMicroelectronics
Introduction
High-voltage, N-channel power MOSFET with low on-resistance and high switching performance
Product Features and Performance
Drain-to-source voltage up to 620V
Low on-resistance down to 3.6Ω
Continuous drain current up to 2.2A
Fast switching performance
High power dissipation up to 45W
Operating temperature up to 150°C
Product Advantages
Excellent power efficiency
High voltage capability
Compact and robust design
Suitable for high-power applications
Key Technical Parameters
Drain-to-source voltage (Vdss): 620V
Gate-to-source voltage (Vgs): ±30V
On-resistance (Rds(on)): 3.6Ω
Continuous drain current (Id): 2.2A
Input capacitance (Ciss): 340pF
Power dissipation (Pd): 45W
Quality and Safety Features
RoHS3 compliant
TO-251 (IPAK) package with short leads
Compatibility
Suitable for a wide range of high-power, high-voltage applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial electronics
Automotive electronics
Product Lifecycle
This product is currently in active production and available. Replacements or upgrades may be available in the future.
Key Reasons to Choose This Product
High voltage capability up to 620V
Low on-resistance for efficient power conversion
High power dissipation up to 45W
Fast switching performance for high-speed applications
Compact and robust TO-251 (IPAK) package
Suitable for a wide range of high-power, high-voltage applications
STU303SSAMHOP
STU2N62K3 2N62K3STMicroelectronics