Manufacturer Part Number
STU2N80K5
Manufacturer
STMicroelectronics
Introduction
High-voltage, N-channel power MOSFET in a TO-251 (IPAK) package.
Product Features and Performance
Designed for high-voltage, high-power applications
Supports drain-to-source voltage up to 800V
Continuous drain current up to 2A at 25°C
Low on-resistance of 4.5Ω at 1A, 10V
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 105pF at 100V
Maximum power dissipation of 45W at 25°C
Product Advantages
Excellent switching performance
High voltage and power handling capability
Compact and efficient package design
Suitable for a wide range of high-voltage applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 800V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 4.5Ω @ 1A, 10V
Continuous Drain Current (Id): 2A @ 25°C
Input Capacitance (Ciss): 105pF @ 100V
Power Dissipation (Pd): 45W @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of high-voltage, high-power applications
Application Areas
Suitable for use in high-voltage power supplies, motor drives, and other industrial applications
Product Lifecycle
This product is currently in active production and not nearing discontinuation.
Replacement or upgrade options are available if needed.
Several Key Reasons to Choose This Product
Excellent high-voltage and high-power handling capabilities
Low on-resistance for improved efficiency
Wide operating temperature range and compact package design
Reliable performance and quality construction
Suitable for a variety of high-voltage industrial applications
STU3030NLSSAMHOP