Manufacturer Part Number
STP33N60DM2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with MDmesh DM2 technology, suitable for a wide range of power conversion applications.
Product Features and Performance
600V breakdown voltage
Low on-resistance (130mΩ typical)
High current capability (24A continuous drain current)
Wide operating temperature range (-55°C to 150°C)
Fast switching speed
Low gate charge (43nC typical)
Optimized for high-efficiency power conversion
Product Advantages
Excellent conduction and switching performance
Improved efficiency in power conversion applications
Robust and reliable design
Compact TO-220 package
Key Technical Parameters
Drain-Source Voltage (Vdss): 600V
Gate-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 130mΩ @ 12A, 10V
Continuous Drain Current (Id): 24A @ 25°C
Input Capacitance (Ciss): 1870pF @ 100V
Power Dissipation (Pd): 190W @ 25°C
Quality and Safety Features
RoHS3 compliant
Meets industrial quality standards
Robust design for reliable operation
Compatibility
Compatible with a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Uninterruptible power supplies (UPS)
Industrial automation and control systems
Renewable energy systems
Product Lifecycle
This product is currently in active production.
Replacement or upgrade options may be available in the future as technology evolves.
Key Reasons to Choose This Product
Excellent power handling and efficiency performance
Robust and reliable design for industrial applications
Wide operating temperature range and RoHS compliance
Compact and easy-to-use TO-220 package
Proven MDmesh DM2 technology for superior switching characteristics
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