Manufacturer Part Number
STP33N65M2
Manufacturer
STMicroelectronics
Introduction
High-performance, high-voltage N-channel power MOSFET
Suitable for use in various power conversion and control applications
Product Features and Performance
High breakdown voltage: 650V drain-to-source voltage
Low on-resistance: 140mΩ @ 12A, 10V
High continuous drain current: 24A @ 25°C
Fast switching speed
Low gate charge: 41.5nC @ 10V
Product Advantages
Excellent power conversion efficiency
Reliable and robust performance
Optimized for high-voltage, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 140mΩ
Continuous Drain Current (Id): 24A
Power Dissipation (Ptot): 190W
Operating Temperature (Tj): 150°C
Quality and Safety Features
RoHS3 compliant
Robust TO-220 package
Compatibility
Suitable for use in various power conversion and control applications, such as:
- Switch-mode power supplies
- Motor drives
- Inverters
- Converters
Application Areas
Industrial equipment
Consumer electronics
Automotive electronics
Product Lifecycle
Currently in active production
Replacements and upgrades available
Key Reasons to Choose This Product
High reliability and robustness
Excellent power conversion efficiency
Suitable for high-voltage, high-power applications
Wide compatibility and versatile applications
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