Manufacturer Part Number
STP32NM50N
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel power MOSFET
Product Features and Performance
Suitable for high-power switching and amplification applications
Low on-resistance for high efficiency
Fast switching speed
High voltage rating up to 500V
Product Advantages
Excellent RDS(on) performance
High avalanche energy capability
Rugged and reliable design
Key Technical Parameters
Drain to Source Voltage (Vdss): 500V
Maximum Gate-Source Voltage (Vgs): ±25V
On-Resistance (RDS(on)): 130mΩ @ 11A, 10V
Continuous Drain Current (ID): 22A @ 25°C
Input Capacitance (Ciss): 1973pF @ 50V
Power Dissipation (Ptot): 190W @ Tc
Quality and Safety Features
RoHS3 compliant
Housed in a rugged TO-220 package
Compatibility
Suitable for various high-power switching and amplification applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
High-voltage power amplifiers
Product Lifecycle
Current product, no discontinuation planned
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent RDS(on) performance for high efficiency
High voltage rating up to 500V
Fast switching speed for high-frequency applications
Rugged and reliable TO-220 package
Suitable for a wide range of high-power switching and amplification applications