Manufacturer Part Number
STP31N65M5
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET transistor
Product Features and Performance
650V breakdown voltage
Low on-resistance (148mΩ @ 11A, 10V)
High current capability (22A continuous)
Fast switching speed
Low gate charge (45nC @ 10V)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent power efficiency
Reliable and robust design
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±25V
Drain Current (Id): 22A (continuous)
On-Resistance (Rds(on)): 148mΩ
Input Capacitance (Ciss): 816pF
Power Dissipation: 150W
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of high-power, high-voltage applications
Application Areas
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
Current product, no discontinuation plans
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable and robust design
Suitable for high-voltage, high-power applications
Wide operating temperature range
RoHS3 compliance for environmental responsibility
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