Manufacturer Part Number
STH145N8F7-2AG
Manufacturer
STMicroelectronics
Introduction
High-performance automotive N-channel power MOSFET with low on-resistance in small DPak package
Product Features and Performance
80V drain-to-source voltage
4mΩ typical on-resistance at 45A, 10V
90A continuous drain current at 25°C case temperature
200W power dissipation at 25°C case temperature
Low gate charge of 96nC at 10V
Wide operating temperature range of -55°C to 175°C
AEC-Q101 qualified for automotive applications
Product Advantages
Excellent thermal performance in small package
Low power losses for improved efficiency
Suitable for high-current, high-power automotive applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 80V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4mΩ @ 45A, 10V
Drain Current (Id): 90A @ 25°C
Input Capacitance (Ciss): 6340pF @ 40V
Power Dissipation (Pd): 200W @ 25°C
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified for automotive applications
Compatibility
Suitable for a wide range of automotive and industrial power electronics applications
Application Areas
Automotive systems (e.g., DC-DC converters, motor drives, lighting)
Industrial power electronics (e.g., switch-mode power supplies, motor drives)
Product Lifecycle
This product is an active and widely available component. No discontinuation or replacement plans are known at this time.
Key Reasons to Choose This Product
Excellent thermal performance and power handling capability in a compact package
Low on-resistance and gate charge for high efficiency
Automotive-grade quality and reliability for harsh environments
Wide operating temperature range and AEC-Q101 qualification
STH110N10F7-6STMicroelectronicsMOSFET N-CH 100V 110A H2PAK-6