Manufacturer Part Number
STH13N120K5-2AG
Manufacturer
STMicroelectronics
Introduction
This is a high-voltage N-channel MOSFET from STMicroelectronics, designed for use in various power electronics applications.
Product Features and Performance
Drain to Source Voltage (Vdss) of 1200 V
Vgs (Max) of ±30 V
Rds On (Max) of 690 mOhm @ 6 A, 10 V
Continuous Drain Current (Id) of 12 A @ 25°C (Tc)
Input Capacitance (Ciss) of 1370 pF @ 100 V
Power Dissipation (Max) of 250 W (Tc)
Vgs(th) (Max) of 5 V @ 100 A
Drive Voltage (Max Rds On, Min Rds On) of 10 V
Gate Charge (Qg) of 44.2 nC @ 10 V
Product Advantages
High-voltage capability for various power applications
Low on-resistance for efficient power switching
Compact surface-mount package for space-constrained designs
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
N-Channel MOSFET
ROHS3 Compliant
H2Pak-2 package
TO-263-3, DPak (2 Leads + Tab), TO-263AB package
Quality and Safety Features
Compliant with RoHS3 directive for environmental safety
Designed and manufactured to STMicroelectronics' high-quality standards
Compatibility
Suitable for use in a wide range of power electronics applications, including motor drives, power supplies, and industrial controls.
Application Areas
Motor drives
Power supplies
Industrial controls
Automotive electronics
Household appliances
Product Lifecycle
This product is an active, in-production part from STMicroelectronics. Replacement or upgrade options may be available, but the specific lifecycle status should be confirmed with the manufacturer.
Key Reasons to Choose This Product
High-voltage capability for demanding power applications
Low on-resistance for efficient power conversion
Compact surface-mount package for space-saving designs
Wide operating temperature range for versatile usage
Compliance with RoHS3 directive for environmental responsibility
Backed by STMicroelectronics' reputation for quality and reliability
