Manufacturer Part Number
STH140N8F7-2
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-current N-channel MOSFET transistor
Product Features and Performance
High drain-source voltage capability of 80V
Low on-resistance of 4mΩ at 45A, 10V
Continuous drain current of 90A at 25°C baseplate temperature
High power dissipation of 200W at 25°C baseplate temperature
Wide operating temperature range of -55°C to 175°C
High input capacitance of 6340pF at 40V
Fast switching with a gate charge of 96nC at 10V
Product Advantages
Excellent performance-to-cost ratio
Robust design for high-power, high-current applications
Compact DPak (TO-263) package
Key Technical Parameters
Drain-Source Voltage (Vdss): 80V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4mΩ at 45A, 10V
Continuous Drain Current (Id): 90A at 25°C
Quality and Safety Features
RoHS3 compliant
Qualified to AEC-Q101 automotive standard
Compatibility
Can be used as a replacement or in conjunction with other DeepGATE and STripFET VII series MOSFETs
Application Areas
High-power motor drives
Switched-mode power supplies
Inverters and converters
Electric vehicle propulsion systems
Product Lifecycle
Currently in production
No plans for discontinuation, and compatible replacements are available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio for high-power, high-current applications
Robust and reliable design qualified to automotive standards
Compact and easy-to-use DPak (TO-263) package
Wide operating temperature range and high power dissipation capability
Fast switching and low on-resistance for efficient power conversion
