Manufacturer Part Number
STH130N10F3-2
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET with low on-resistance and fast switching speed, suitable for various power conversion applications.
Product Features and Performance
Robust and reliable design with low on-resistance
Optimized for high-frequency switching applications
Fast switching speed and low gate charge for improved efficiency
Wide operating temperature range of -55°C to 175°C
High avalanche energy capability
Product Advantages
Excellent thermal performance and power handling capability
Reduced conduction and switching losses for higher system efficiency
Suitable for high-frequency, high-current power conversion applications
Reliable and rugged design for demanding environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 9.3mΩ @ 60A, 10V
Continuous Drain Current (Id): 120A @ 25°C
Input Capacitance (Ciss): 3305pF @ 25V
Power Dissipation (Tc): 250W
Quality and Safety Features
RoHS3 compliant
Robust H2Pak-2 package for high power and reliability
Designed and manufactured to high quality standards
Compatibility
Compatible with a wide range of power electronic applications
Suitable for use in various power conversion and control systems
Application Areas
Switching power supplies
Motor drives
Inverters and converters
Power factor correction circuits
Industrial automation and control systems
Product Lifecycle
Current production model, not nearing discontinuation
Replacement and upgrade options available from STMicroelectronics
Several Key Reasons to Choose This Product
Exceptional performance and efficiency due to low on-resistance and fast switching
Robust and reliable design suitable for demanding applications
Wide operating temperature range and high power handling capability
Proven track record and support from a leading semiconductor manufacturer
Availability of replacement and upgrade options for future design needs