Manufacturer Part Number
STFU18N65M2
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance N-channel power MOSFET
Part of the MDmesh M2 series
Product Features and Performance
Drain-to-Source Voltage (Vdss) of 650V
Maximum Gate-to-Source Voltage (Vgs) of ±25V
Low On-Resistance (Rds(on)) of 330mΩ @ 6A, 10V
Continuous Drain Current (Id) of 12A at 25°C
Input Capacitance (Ciss) of 770pF @ 100V
Power Dissipation (Ptot) of 25W at 25°C
Product Advantages
High blocking voltage capability
Low on-resistance for low conduction losses
Robust design for reliable operation
Suitable for high-voltage, high-power applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide Semiconductor Field-Effect Transistor)
FET Type: N-Channel
Threshold Voltage (Vgs(th)): 4V @ 250A
Drive Voltage: 10V (maximum Rds(on), minimum Rds(on))
Gate Charge (Qg): 20nC @ 10V
Quality and Safety Features
RoHS3 compliant
Meets industrial-grade operating temperature range of -55°C to 150°C
Compatibility
Through-hole mounting package: TO-220-3 Full Pack
Application Areas
Switching power supplies
Motor drives
Industrial automation and control
Lighting and lighting ballasts
Household appliances
Product Lifecycle
Currently available
No indication of discontinuation or replacement
Several Key Reasons to Choose This Product
High voltage capability up to 650V
Low on-resistance for efficient power conversion
Robust and reliable design for industrial applications
Suitable for a wide range of high-voltage, high-power applications
Meets industrial-grade temperature requirements