Manufacturer Part Number
STFU13N65M2
Manufacturer
STMicroelectronics
Introduction
High-voltage, high-performance, and high-efficiency N-channel power MOSFET
Product Features and Performance
650V drain-to-source voltage rating
430mΩ maximum on-resistance
10A continuous drain current at 25°C
25W power dissipation at 25°C
Fast switching performance
Low gate charge
Product Advantages
Excellent energy efficiency
High power density
Reliable and robust design
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 650V
Gate-to-Source Voltage (Vgs): ±25V
On-Resistance (Rds(on)): 430mΩ @ 5A, 10V
Drain Current (Id): 10A @ 25°C
Power Dissipation (Ptot): 25W @ 25°C
Input Capacitance (Ciss): 590pF @ 100V
Gate Charge (Qg): 17nC @ 10V
Quality and Safety Features
RoHS3 compliant
Reliable and robust design
Suitable for high-temperature operation (up to 150°C junction temperature)
Compatibility
Compatible with various high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Lighting ballasts
Welding equipment
Automotive electronics
Product Lifecycle
Currently available
No known plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for improved energy efficiency
Fast switching performance for high-frequency applications
Robust and reliable design for demanding environments
Suitable for a wide range of high-voltage, high-power applications