STFU28N65M2 - STMicroelectronics

Manufacturer Part Number

STFU28N65M2

Manufacturer

STMicroelectronics

Introduction

High-voltage, high-power N-channel MOSFET with improved performance and reliability

Product Features and Performance

High blocking voltage of 650V

Low on-resistance of 180mOhm at 10A, 10V

High continuous drain current of 20A at 25°C

Wide operating temperature range of -55°C to 150°C

Low gate charge of 35nC at 10V

Improved power dissipation up to 30W at Tc

Product Advantages

Superior power handling capability

Reduced power losses and increased energy efficiency

Reliable operation in high-power applications

Broad temperature range suitable for diverse environments

Key Technical Parameters

Drain-Source Voltage (Vdss): 650V

Gate-Source Voltage (Vgs, max): ±25V

On-Resistance (Rds(on), max): 180mOhm @ 10A, 10V

Drain Current (Id, cont @ 25°C): 20A

Input Capacitance (Ciss, max): 1440pF @ 100V

Power Dissipation (Ptot, max): 30W

Quality and Safety Features

RoHS3 compliant

Suitable for harsh environments due to wide temperature range

Compatibility

Compatible with various high-power, high-voltage applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Industrial and consumer electronics

Product Lifecycle

Current production model

Replacements and upgrades available

Key Reasons to Choose

High performance and reliability

Efficient power handling

Broad temperature range

RoHS compliance

Compatibility with a wide range of high-power applications