STFW3N170 - STMicroelectronics

Manufacturer Part Number

STFW3N170

Manufacturer

STMicroelectronics

Introduction

The STFW3N170 is a high-voltage, N-channel MOSFET transistor from STMicroelectronics.

Product Features and Performance

High drain-to-source voltage of 1700V

Low on-resistance of 13Ω at 1.3A, 10V

High continuous drain current of 2.6A at 25°C

Wide operating temperature range of -55°C to 150°C

Fast switching speed and low gate charge of 44nC at 10V

Product Advantages

Excellent high-voltage performance

Efficient power handling

Reliable and robust design

Suitable for a variety of high-voltage applications

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 1700V

Gate-to-Source Voltage (Vgs): ±30V

On-Resistance (Rds(on)): 13Ω @ 1.3A, 10V

Continuous Drain Current (Id): 2.6A at 25°C

Input Capacitance (Ciss): 1100pF @ 100V

Power Dissipation (Pd): 63W at Tc

Quality and Safety Features

Compliant with RoHS 3 directive

Reliable and robust design for industrial applications

Suitable for high-voltage, high-power switching applications

Compatibility

Suitable for a wide range of high-voltage, high-power applications

Can be used as a replacement or upgrade for similar MOSFET transistors

Application Areas

Power converters and inverters

Motor control circuits

Industrial and automotive electronics

Lighting and display systems

Product Lifecycle

This product is currently available and not nearing discontinuation

Replacement or upgraded models may be available in the future

Several Key Reasons to Choose This Product

Excellent high-voltage performance with 1700V drain-to-source voltage

Efficient power handling with low on-resistance and high continuous drain current

Reliable and robust design suitable for industrial and high-power applications

Wide operating temperature range of -55°C to 150°C

Compliant with RoHS 3 directive for environmental safety