Manufacturer Part Number
STFW3N170
Manufacturer
STMicroelectronics
Introduction
The STFW3N170 is a high-voltage, N-channel MOSFET transistor from STMicroelectronics.
Product Features and Performance
High drain-to-source voltage of 1700V
Low on-resistance of 13Ω at 1.3A, 10V
High continuous drain current of 2.6A at 25°C
Wide operating temperature range of -55°C to 150°C
Fast switching speed and low gate charge of 44nC at 10V
Product Advantages
Excellent high-voltage performance
Efficient power handling
Reliable and robust design
Suitable for a variety of high-voltage applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 1700V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 13Ω @ 1.3A, 10V
Continuous Drain Current (Id): 2.6A at 25°C
Input Capacitance (Ciss): 1100pF @ 100V
Power Dissipation (Pd): 63W at Tc
Quality and Safety Features
Compliant with RoHS 3 directive
Reliable and robust design for industrial applications
Suitable for high-voltage, high-power switching applications
Compatibility
Suitable for a wide range of high-voltage, high-power applications
Can be used as a replacement or upgrade for similar MOSFET transistors
Application Areas
Power converters and inverters
Motor control circuits
Industrial and automotive electronics
Lighting and display systems
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgraded models may be available in the future
Several Key Reasons to Choose This Product
Excellent high-voltage performance with 1700V drain-to-source voltage
Efficient power handling with low on-resistance and high continuous drain current
Reliable and robust design suitable for industrial and high-power applications
Wide operating temperature range of -55°C to 150°C
Compliant with RoHS 3 directive for environmental safety
