Manufacturer Part Number
STFW6N120K3
Manufacturer
STMicroelectronics
Introduction
High-voltage, N-channel MOSFET transistor designed for high-reliability power applications
Product Features and Performance
High drain-source voltage rating of 1200V
Low on-resistance of 2.4Ω at 2.5A, 10V
Continuous drain current of 6A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 1050pF at 100V
Power dissipation up to 63W at 25°C
Product Advantages
Robust design for high-reliability applications
Superior switching performance
High voltage handling capability
Efficient power conversion
Key Technical Parameters
Drain-Source Voltage (Vdss): 1200V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 2.4Ω @ 2.5A, 10V
Continuous Drain Current (Id): 6A @ 25°C
Input Capacitance (Ciss): 1050pF @ 100V
Power Dissipation (Ptot): 63W @ 25°C
Quality and Safety Features
RoHS3 compliant
Designed for high-reliability applications
Compatibility
Compatible with a wide range of high-voltage power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Industrial and automotive power electronics
Product Lifecycle
This product is currently in production and available. No discontinuation or replacement information is available.
Key Reasons to Choose This Product
High voltage handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Robust design for high-reliability applications
Optimized switching performance
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