Manufacturer Part Number
STE48NM60
Manufacturer
STMicroelectronics
Introduction
High voltage N-Channel MOSFET transistor
Product Features and Performance
650V drain-source voltage
110mOhm on-resistance
48A continuous drain current
450W power dissipation
Fast switching performance
Product Advantages
High voltage and current capability
Low on-resistance for high efficiency
Robust design for reliable operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 650V
Gate-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 110mOhm
Continuous Drain Current (Id): 48A
Power Dissipation: 450W
Input Capacitance (Ciss): 3800pF
Gate Charge (Qg): 134nC
Quality and Safety Features
RoHS non-compliant
Designed for high reliability and safety
Compatibility
Suitable for use in high-voltage, high-power applications
Application Areas
Switched-mode power supplies
Motor drives
Inverters
Industrial and consumer electronics
Product Lifecycle
This product is an established part and is currently available.
Key Reasons to Choose This Product
High voltage and current handling capabilities
Low on-resistance for high efficiency
Robust and reliable design
Suitable for a wide range of high-power applications