STE70NM50 - STMicroelectronics

Manufacturer Part Number

STE70NM50

Manufacturer

STMicroelectronics

Introduction

High-voltage, high-power N-channel MOSFET

Product Features and Performance

Drain-to-source voltage (Vdss) of 500V

Continuous drain current (ID) of 70A at 25°C case temperature

On-state resistance (RDS(on)) of 50 mΩ at 30A, 10V gate-source voltage

Input capacitance (Ciss) of 7500 pF at 25V drain-source voltage

Power dissipation (Ptot) of 600W at 25°C case temperature

Capable of operating at junction temperatures up to 150°C

Product Advantages

High power density

Low on-state resistance

Fast switching performance

Reliable and robust design

Key Technical Parameters

MOSFET technology

N-channel configuration

ISOTOP package

±30V gate-source voltage rating

Quality and Safety Features

RoHS3 compliant

JEDEC-registered package

Compatibility

Suitable for high-power switching applications, such as motor drives, power supplies, and industrial controls

Application Areas

Industrial automation

Power conversion

Motor control

Welding equipment

Uninterruptible power supplies (UPS)

Product Lifecycle

Current production model, no plans for discontinuation

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

High power handling capability

Efficient power conversion with low on-state resistance

Reliable and robust design for industrial environments

Compatibility with a wide range of high-power applications