STE70NM60 - STMicroelectronics

Manufacturer Part Number

STE70NM60

Manufacturer

STMicroelectronics

Introduction

High-performance N-channel MOSFET with MDmesh technology

Product Features and Performance

600V drain-to-source voltage

70A continuous drain current at 25°C

55mΩ maximum on-resistance at 30A, 10V

7300pF maximum input capacitance at 25V

600W maximum power dissipation at Tc

Product Advantages

Improved efficiency and reduced power losses

Excellent switching performance

High reliability and robustness

Key Technical Parameters

MOSFET technology: N-channel

Drain-to-source voltage (Vdss): 600V

Gate-to-source voltage (Vgs): ±30V

Continuous drain current (Id): 70A at 25°C

On-resistance (Rds(on)): 55mΩ at 30A, 10V

Input capacitance (Ciss): 7300pF at 25V

Power dissipation (Pd): 600W at Tc

Quality and Safety Features

RoHS3 compliant

ISOTOP packaging for improved thermal performance

Compatibility

Suitable for a wide range of power electronics applications

Application Areas

Switch-mode power supplies

Inverters

Motor drives

Industrial and consumer electronics

Product Lifecycle

Currently in production

Availability of replacements or upgrades may be subject to change

Several Key Reasons to Choose This Product

High efficiency and low power losses

Excellent switching performance for fast-switching applications

Robust and reliable design for demanding environments

Proven MDmesh technology for superior performance