Manufacturer Part Number
STE45NK80ZD
Manufacturer
STMicroelectronics
Introduction
High-performance, vertical N-channel power MOSFET with low on-resistance and high breakdown voltage, suitable for high-power switching applications.
Product Features and Performance
High breakdown voltage up to 800V
Low on-resistance of 130mOhm @ 22.5A, 10V
High continuous drain current of 45A at 25°C
Wide operating temperature range of -65°C to 150°C
Low input capacitance of 26,000pF
High power dissipation of 600W
N-channel MOSFET with enhanced performance
Product Advantages
Excellent power handling capability
Highly efficient power switching
Wide temperature operating range
Compact and robust packaging
Key Technical Parameters
Drain-Source Voltage (Vdss): 800V
Gate-Source Voltage (Vgs): ±30V
Drain Current (Id): 45A
On-Resistance (Rds(on)): 130mOhm
Input Capacitance (Ciss): 26,000pF
Power Dissipation (Pd): 600W
Gate Charge (Qg): 781nC
Quality and Safety Features
RoHS3 compliant
ISOTOP packaging for reliable performance
Designed and manufactured to high quality standards
Compatibility
Suitable for high-power switching applications such as power supplies, motor drives, and industrial automation.
Application Areas
Power supplies
Motor drives
Industrial automation
Inverters
Welding equipment
Lighting ballasts
Product Lifecycle
This product is an active, high-performance part from STMicroelectronics. Replacement or upgrade options may be available as technology evolves.
Key Reasons to Choose
Excellent power handling and efficiency
Wide operating temperature range
Robust and reliable ISOTOP packaging
Proven performance in high-power switching applications
Part of STMicroelectronics' extensive portfolio of power semiconductors
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