Manufacturer Part Number
STD7NM80-1
Manufacturer
STMicroelectronics
Introduction
High voltage N-channel power MOSFET
Part of the MDmesh series
Product Features and Performance
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30 V
On-resistance (Rds On): 1.05 Ω @ 3.25 A, 10 V
Continuous Drain Current (Id): 6.5 A @ 25°C (Tc)
Input Capacitance (Ciss): 620 pF @ 25 V
Power Dissipation (Max): 90 W (Tc)
Operating Temperature: -55°C to 150°C (TJ)
Product Advantages
High voltage and high power handling capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Key Technical Parameters
MOSFET technology: N-channel
Threshold Voltage (Vgs(th)): 5 V @ 250 A
Drive Voltage (Max Rds On, Min Rds On): 10 V
Gate Charge (Qg): 18 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Qualified for high-reliability applications
Compatibility
Through-hole mounting (TO-251/IPAK package)
Application Areas
High-voltage power supplies
Motor drives
Switching power converters
Industrial and automotive electronics
Product Lifecycle
Current production, no discontinuation planned
Replacements and upgrades available within the MDmesh series
Key Reasons to Choose This Product
Excellent high-voltage and high-power performance
Low on-resistance for efficient power conversion
Wide operating temperature range for reliable operation
RoHS3 compliance for environmentally-friendly applications
Proven reliability and suitability for industrial and automotive use