Manufacturer Part Number
STD7NM60N
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET device
Product Features and Performance
600V drain-to-source voltage
900mΩ maximum on-resistance
5A continuous drain current at 25°C
Low gate charge and fast switching
Suitable for high-frequency applications
Product Advantages
Efficient power conversion
Compact surface-mount package
Reliable and rugged design
Key Technical Parameters
Drain-to-source voltage (Vdss): 600V
Maximum gate-to-source voltage (Vgs): ±25V
On-resistance (Rds(on)): 900mΩ @ 2.5A, 10V
Continuous drain current (Id): 5A at 25°C
Input capacitance (Ciss): 363pF @ 50V
Power dissipation (Ptot): 45W at Tc
Quality and Safety Features
RoHS3 compliant
Designed for high reliability and safety
Compatibility
Suitable for a variety of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Lighting ballasts
Welding equipment
Home appliances
Product Lifecycle
This product is currently available and not nearing discontinuation
Replacement or upgrade options may be available from the manufacturer
Key Reasons to Choose This Product
Excellent power handling capabilities
Efficient and reliable performance
Compact and easy to integrate
Suitable for a wide range of applications
Backed by the quality and expertise of STMicroelectronics
STD7NK40ZT4 MOSSTMicroelectronics