Manufacturer Part Number
STD80N6F6
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor
Designed for automotive and industrial applications
Product Features and Performance
High power density with low on-resistance
Optimized for high-efficiency power conversion
Ultra-low gate charge for fast switching
Excellent thermal performance
Robust design for reliability in harsh environments
Product Advantages
Improved energy efficiency
Reduced power losses
Increased system reliability
Compact and space-saving design
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 6.5mΩ @ 40A, 10V
Continuous Drain Current (Id): 80A (at 25°C)
Input Capacitance (Ciss): 7480pF @ 25V
Power Dissipation (Tc): 120W
Quality and Safety Features
RoHS3 compliant
Automotive-grade AEC-Q101 qualified
Designed for reliability in harsh environments
Compatibility
Surface mount DPAK package
Compatible with a wide range of power electronics applications
Application Areas
Automotive electronics
Industrial power conversion
Server and telecom power supplies
Renewable energy systems
Product Lifecycle
Current production model
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent power efficiency and low power losses
Robust and reliable design for demanding applications
Compact and space-saving package
Proven performance in automotive and industrial environments
Comprehensive technical support and product availability from STMicroelectronics