Manufacturer Part Number
STD80N10F7
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel power MOSFET optimized for fast switching, high efficiency power conversion applications
Product Features and Performance
Low on-resistance for low conduction losses
Fast switching for improved efficiency
Optimized for high frequency switching
Robust and rugged design for high reliability
Product Advantages
Excellent thermal performance
Low gate charge for efficient switching
High-power density design
Supports high-frequency operation
Key Technical Parameters
Drain-source voltage (Vdss): 100V
Maximum gate-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 10mΩ @ 40A, 10V
Continuous drain current (Id): 70A @ 25°C
Input capacitance (Ciss): 3100pF @ 50V
Power dissipation (Pd): 85W @ Tc
Quality and Safety Features
RoHS3 compliant
DPAK package for efficient heat dissipation
Designed and manufactured to high quality standards
Compatibility
Suitable for a wide range of power conversion and control applications
Application Areas
Switch-mode power supplies
Motor drives
Industrial and consumer electronics
Automotive electronics
Product Lifecycle
Currently available, no plans for discontinuation. Upgrades and replacements may become available in the future.
Key Reasons to Choose This Product
Excellent efficiency and thermal performance
Fast, low-loss switching for high-frequency operation
Robust and reliable design for demanding applications
Space-saving DPAK package for high power density
Well-suited for a variety of power electronics systems