Manufacturer Part Number
STD4NK60ZT4
Manufacturer
STMicroelectronics
Introduction
High-performance N-channel MOSFET transistor
Product Features and Performance
High breakdown voltage of 600V
Low on-resistance of 2Ω
Continuous drain current of 4A at 25°C
Capable of handling high power dissipation of up to 70W
Fast switching speed and low gate charge
Product Advantages
Excellent power efficiency
Reliable and rugged design
Suitable for high-voltage, high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 2Ω @ 2A, 10V
Continuous Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 510pF @ 25V
Power Dissipation (Tc): 70W
Quality and Safety Features
RoHS3 compliant
Reliable MOSFET technology
Compatibility
Surface mount package (DPAK)
Compatible with high-voltage, high-power applications
Application Areas
Switching power supplies
Motor drives
Industrial automation equipment
Lighting control
Telecommunications equipment
Product Lifecycle
Current product, no discontinuation planned
Replacement or upgrade parts available from manufacturer
Key Reasons to Choose This Product
High efficiency and power handling capability
Rugged and reliable design
Suitable for a wide range of high-voltage, high-power applications
Availability of replacement and upgrade parts from the manufacturer
STD4NK6STMicroelectronics
STD4NK60Z-D4NK60ZSTM