Manufacturer Part Number
STD4NK60Z-1
Manufacturer
STMicroelectronics
Introduction
High-voltage, N-channel power MOSFET in an I-PAK package
Product Features and Performance
Operates at high voltages up to 600V
Continuous drain current up to 4A at 25°C case temperature
Low on-resistance of 2Ω at 2A, 10V
Wide operating temperature range of -55°C to 150°C
Integrated SuperMESH technology for improved performance
Product Advantages
Robust and reliable design
Efficient power conversion
Suitable for high-voltage applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 600V
Gate-to-Source Voltage (Vgs): ±30V
On-Resistance (Rds(on)): 2Ω @ 2A, 10V
Continuous Drain Current (Id): 4A @ 25°C
Input Capacitance (Ciss): 510pF @ 25V
Power Dissipation (Tc): 70W
Quality and Safety Features
RoHS3 compliant
Meets safety and environmental standards
Compatibility
Suitable for use in a variety of high-voltage power applications, including:
Switched-mode power supplies
Motor drives
Inverters
Power conversion circuits
Application Areas
Industrial electronics
Power electronics
Automotive electronics
Product Lifecycle
This product is currently available and actively supported by the manufacturer. No discontinuation or end-of-life plans have been announced.
Key Reasons to Choose This Product
High voltage and current capability
Low on-resistance for efficient power conversion
Wide operating temperature range
Robust and reliable design
Integrated SuperMESH technology for improved performance
RoHS3 compliance for environmental considerations